2sc5227a no. a1063-1/8 features ? low-noise : nf=1.0db typ (f=1ghz) ? high gain : ? s21e ? 2 =12db typ (f=1ghz) ? high cut-off frequency : f t =7ghz typ speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 2v collector current i c 70 ma collector dissipation p c 200 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7013a-009 ordering number : ENA1063A 71812 tkim/51408ab tiim tc-00001342 sanyo semiconductors data sheet 2sc5227a npn epitaxial planar silicon transistor vhf to uhf wide-band low-noise ampli er applications http:// semicon.sanyo.com/en/network product & package information ? package : cp ? jeita, jedec : sc-59, to-236, sot-23, to-236ab ? minimum packing quantity : 3,000 pcs./reel packing type: tb marking electrical connection 1 : base 2 : emitter 3 : collector sanyo : cp 12 3 1.5 2.5 1.1 0.3 0.05 2.9 0.95 0.4 0.1 0.5 0.5 tb ln lot no. r a n k lot no. 2sc5227a-4-tb-e 2sc5227a-5-tb-e 3 2 1
2sc5227a no. a1063-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 1.0 a emitter cutoff current i ebo v eb =1v, i c =0a 10 a dc current gain h fe v ce =5v, i c =20ma 60* 270* gain-bandwidth product f t v ce =5v, i c =20ma 5 7 ghz output capacitance cob v cb =10v, f=1mhz 0.75 1.2 pf reverse transfer capacitance cre 0.5 pf forward transfer gain ? s21e ? 2 1v ce =5v, i c =20ma, f=1ghz 9 12 db ? s21e ? 2 2v ce =2v, i c =3ma, f=1ghz 8 db noise figure nf v ce =5v, i c =7ma, f=1ghz 1.0 1.8 db * : the 2sc5227a is classi ed by 20ma h fe as follows : rank 3 4 5 h fe 60 to 120 90 to 180 135 to 270 ordering information device package shipping memo 2sc5227a-4-tb-e cp 3,000pcs./reel pb free 2sc5227a-5-tb-e cp 3,000pcs./reel h fe -- i c collector current, i c -- ma dc current gain, h fe cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf collector current, i c -- m a gain-bandwidth product, f t -- ghz f t -- i c cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cre -- pf itr08204 f=1mhz itr07966 f=1mhz itr08202 5 33 32 1.0 7 57 2 2 10 57 100 3 5 3 2 1.0 10 7 3 5 2 0.1 7 72 35 3 2 1.0 7 35 2 0.1 7 72 10 1.0 0.1 2 3 5 7 5 7 2 3 1.0 0.1 2 3 5 7 5 7 2 3 v ce =5v itr08203 23 3 57 7 10 1.0 7 100 5 22 7 10 1.0 5 7 5 2 3 2 v ce =5v 100 10 2 3 5 7 5 7 2 3
2sc5227a no. a1063-3/8 ? s21e ? 2 -- i c collector current, i c -- ma forward transfer gain, ? s21e ? 2 -- db collector current, i c -- ma collector dissipation, p c -- mw p c -- ta ambient temperature, ta -- c noise figure, nf -- db nf -- i c itr08206 0 14 12 10 8 6 4 2 357 1.0 23 57 10 100 22 357 v ce =5v f=1ghz 0 20 40 60 80 100 120 140 160 0 40 80 120 160 200 240 itr08208 v ce =2v 0 12 10 8 6 4 2 itr08207 3 2 57 3 1.0 3 5 722 10 5 7 100 v ce =5v f=1ghz
2sc5227a no. a1063-4/8 f=100mhz, 200mhz to 2000mhz(200mhz step) f=100mhz, 200mhz to 2000mhz(200mhz step) f=100mhz, 200mhz to 2000mhz(200mhz step) f=100mhz, 200mhz to 2000mhz(200mhz step) j50 j25 j10 0 10 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 16 20 12 8 4 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 0.04 0.08 0.16 0.12 0.2 j50 j25 j10 0 10 25 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 50 itr08209 itr08210 itr08211 itr08212 25 50 2.0ghz v ce =2v i c =3ma v ce =5v i c =20ma v ce =5v i c =7ma 0.1ghz 0.1ghz 0.1ghz 2.0ghz 2.0hz 0.1ghz 0.1ghz 0.1ghz v ce =5v i c =7ma v ce =2v i c =3ma v ce =5v i c =20ma 2.0ghz 2.0ghz 2.0ghz v ce =2v i c =3ma v ce =5v i c =7ma v ce =5v i c =20ma 0.1ghz 0.1ghz 0.1ghz 2.0ghz 2.0ghz 2.0ghz 2.0ghz 2.0ghz 2.0ghz v ce =5v i c =20ma 0.1ghz 0.1ghz 0.1ghz v ce =2v i c =3ma v ce =5v i c =7ma
2sc5227a no. a1063-5/8 s parameters (common emitter) v ce =5v, i c =7ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.722 -41.6 17.352 148.7 0.029 70.9 0.883 -21.3 200 0.587 -73.2 13.419 127.6 0.046 60.8 0.710 -33.1 400 0.426 -113.0 8.371 105.1 0.067 56.9 0.507 -40.7 600 0.369 -136.6 5.914 92.7 0.084 58.4 0.423 -42.5 800 0.344 -152.9 4.593 83.9 0.102 60.3 0.382 -43.9 1000 0.334 -165.7 3.750 76.7 0.121 61.5 0.360 -46.3 1200 0.326 -177.9 3.178 70.3 0.141 62.0 0.350 -49.1 1400 0.324 172.3 2.784 64.9 0.162 61.8 0.341 -52.2 1600 0.328 163.4 2.476 59.5 0.183 61.2 0.334 -56.4 1800 0.335 154.5 2.246 54.6 0.204 60.5 0.328 -60.8 2000 0.346 147.5 3.073 50.0 0.226 59.6 0.328 -65.4 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.477 -66.8 28.090 133.6 0.022 67.7 0.726 -32.7 200 0.358 -104.1 17.995 112.9 0.035 65.3 0.506 -41.6 400 0.288 -142.2 9.903 95.9 0.057 68.3 0.350 -42.4 600 0.273 -159.8 6.777 86.7 0.081 69.9 0.299 -41.8 800 0.270 -171.7 5.181 79.9 0.104 70.2 0.278 -43.2 1000 0.271 178.7 4.209 73.9 0.129 69.1 0.269 -45.9 1200 0.273 169.4 3.554 68.5 0.153 67.9 0.264 -49.6 1400 0.275 161.1 3.085 63.6 0.177 66.2 0.258 -53.3 1600 0.284 153.4 2.749 59.1 0.202 64.3 0.253 -58.3 1800 0.294 145.6 2.479 54.6 0.224 62.5 0.249 -63.4 2000 0.302 140.8 2.295 50.6 0.248 60.4 0.248 -68.7 v ce =2v, i c =3ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.858 -30.5 9.283 157.3 0.039 73.6 0.944 -15.6 200 0.769 -57.4 8.036 138.7 0.068 61.4 0.834 -27.5 400 0.607 -97.1 5.756 113.9 0.099 48.4 0.641 -40.5 600 0.528 -123.2 4.302 98.1 0.114 44.4 0.525 -46.5 800 0.486 -141.6 3.414 87.0 0.125 43.9 0.465 -50.2 1000 0.460 -156.4 2.834 78.0 0.137 45.4 0.429 -53.7 1200 0.453 -169.4 2.429 70.3 0.149 47.5 0.408 -57.3 1400 0.440 179.8 2.143 63.6 0.163 49.2 0.395 -60.9 1600 0.441 170.1 1.919 57.4 0.179 50.8 0.385 -65.4 1800 0.447 160.4 1.739 51.7 0.196 52.3 0.381 -70.1 2000 0.454 152.5 1.621 46.4 0.215 53.3 0.379 -75.2
2sc5227a no. a1063-6/8 embossed taping speci cation 2sc5227a-4-tb-e, 2sc5227a-5-tb-e
2sc5227a no. a1063-7/8 outline drawing land pattern example 2sc5227a-4-tb-e, 2sc5227a-5-tb-e mass (g) unit 0.013 * for reference mm unit: mm 0.95 0.95 1.0 2.4 0.8
2sc5227a ps no. a1063-8/8 this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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